IPB041N04NGATMA1
MOSFET N-CH 40V 80A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB041N04NGATMA1 is a 40 V N-Channel Power MOSFET designed for high-efficiency applications. This device features a low on-resistance of 4.1 mOhm at 80A and 10V Vgs, minimizing conduction losses. The continuous drain current capability is 80A (Tc), with a maximum power dissipation of 94W (Tc). Key electrical characteristics include a gate charge of 56 nC (Max) at 10V and input capacitance of 4500 pF (Max) at 20V. The device is housed in a PG-TO263-3 package, also known as D2PAK, suitable for surface mounting. Operating temperature range is -55°C to 175°C (TJ). This component is widely utilized in automotive systems, industrial power supplies, and power management solutions.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 45µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 20 V |
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