IPB0401NM5SATMA1
TRENCH >=100VManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies IPB0401NM5SATMA1 is a TRENCH MOSFET designed for demanding applications. This component is a high-performance power transistor suitable for power management and motor control systems. Its robust construction and advanced trench technology enable efficient switching and low conduction losses. The IPB0401NM5SATMA1 finds application in industrial automation, power supplies, and automotive electronics where reliability and performance are paramount. This device is supplied in Tape & Reel packaging for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Operating Temperature | - |
| Technology | - |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
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