IPB03N03LB G
MOSFET N-CH 30V 80A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPB03N03LB-G is an N-channel Power MOSFET designed for high-performance applications. This component features a 30V drain-source breakdown voltage and supports a continuous drain current of 80A at 25°C (Tc), with a maximum power dissipation of 150W (Tc). The device boasts a low on-resistance of 2.8mOhm at 55A and 10V gate-source voltage. Key electrical characteristics include a gate charge (Qg) of 59 nC at 5V and input capacitance (Ciss) of 7624 pF at 15V. The IPB03N03LB-G utilizes a surface mount PG-TO263-3 package, also known as TO-263-3, D2PAK. Its operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for use in industrial and automotive power management systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 100µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7624 pF @ 15 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
