IPB03N03LB
MOSFET N-CH 30V 80A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB03N03LB. This N-Channel power MOSFET features a 30V drain-source voltage and a continuous drain current of 80A at 25°C (Tc). With a low on-resistance of 2.8mOhm at 55A and 10V, this device offers efficient power handling. The IPB03N03LB is housed in a PG-TO263-3 (D2PAK) surface mount package, facilitating integration into compact designs. Key parameters include a gate charge of 59nC at 5V and input capacitance of 7624pF at 15V. It operates across a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 150W (Tc). This component is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 100µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7624 pF @ 15 V |
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