IPB039N10N3GE8187ATMA1
MOSFET N-CH 100V 160A TO263-7Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB039N10N3GE8187ATMA1 is an N-Channel Power MOSFET designed for high-performance applications. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 160A at 25°C, with a maximum power dissipation of 214W. The low on-resistance of 3.9mOhm at 100A and 10V Vgs makes it suitable for demanding switching applications. Key parameters include a Gate Charge (Qg) of 117 nC at 10V and Input Capacitance (Ciss) of 8410 pF at 50V. The component is housed in a PG-TO263-7 (D2PAK) package for surface mounting and operates across a temperature range of -55°C to 175°C. This MOSFET is commonly utilized in power supply units, electric vehicle charging, and industrial motor control systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 160µA |
| Supplier Device Package | PG-TO263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8410 pF @ 50 V |