IPB039N04LGATMA1
MOSFET N-CH 40V 80A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB039N04LGATMA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 80A at 25°C (Tc), with a maximum power dissipation of 94W (Tc). The low on-resistance (Rds On) of 3.9mOhm at 80A and 10V (Vgs) minimizes conduction losses. It offers a gate charge (Qg) of 78 nC (Max) at 10V and input capacitance (Ciss) of 6100 pF (Max) at 25V. The IPB039N04LGATMA1 is housed in a PG-TO263-3 (D2PAK) surface mount package, suitable for automated assembly. Operating temperature range is -55°C to 175°C (TJ). Applications include automotive power systems, industrial power supplies, and switch-mode power supplies.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 45µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6100 pF @ 25 V |