IPB035N08N3GATMA1
MOSFET N-CH 80V 100A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB035N08N3GATMA1 is a high-performance N-channel Power MOSFET. This device offers an 80V drain-source voltage and a continuous drain current of 100A at 25°C (Tc). Featuring a low on-resistance of 3.5mOhm at 100A and 10V Vgs, it is engineered for efficient power switching applications. The IPB035N08N3GATMA1 has a maximum power dissipation of 214W (Tc) and a gate charge of 117nC at 10V. Its input capacitance (Ciss) is 8110pF at 40V. Packaged in a PG-TO263-3 (D2PAK) surface-mount package, it is supplied on tape and reel. This MOSFET is suitable for use in automotive, industrial, and consumer electronics power management systems. The operating junction temperature range is -55°C to 175°C.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 155µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8110 pF @ 40 V |