IPB034N06N3GATMA2
TRENCH 40<-<100VManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™3 N-Channel Power MOSFET, part number IPB034N06N3GATMA2, offers exceptional performance with a 60V Vds rating and a continuous drain current of 100A at 25°C (Tc). This device features a low on-resistance of 3.4mOhm at 100A and 10V Vgs, complemented by a gate charge of 130nC (max) at 10V. The TO-263-7-3 package facilitates surface mounting, with a maximum power dissipation of 167W (Tc) and an operating temperature range of -55°C to 175°C (TJ). This component is ideal for demanding applications across automotive, industrial, and power supply sectors.
Additional Information
Series: OptiMOS™3RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 93µA |
| Supplier Device Package | PG-TO263-7-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11000 pF @ 30 V |
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