IPB034N06L3GATMA1
MOSFET N-CH 60V 90A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ series N-Channel Power MOSFET, part number IPB034N06L3GATMA1, is engineered for high-performance applications. This device features a 60V drain-to-source voltage rating and a continuous drain current of 90A at 25°C (Tc), with a maximum power dissipation of 167W (Tc). The low on-resistance of 3.4mOhm at 90A and 10V, coupled with a gate charge of 79nC at 4.5V, ensures efficient switching. It utilizes a surface mount PG-TO263-3 package for thermal management. The MOSFET is suitable for demanding applications across automotive, industrial power control, and server power supply sectors. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 93µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13000 pF @ 30 V |