IPB034N03LGATMA1
MOSFET N-CH 30V 80A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB034N03LGATMA1 is an N-Channel MOSFET designed for high-current applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 80A at 25°C (Tc). Its low on-resistance (Rds On) of 3.4mOhm at 30A and 10V Vgs ensures efficient power transfer. The MOSFET operates with a gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) of 2.2V maximum.
Key parameters include a gate charge (Qg) of 51 nC at 10V and input capacitance (Ciss) of 5300 pF at 15V. The power dissipation (Pd) is rated at 94W (Tc). Packaged in a TO-263-3, D2PAK (PG-TO263-3) surface mount configuration, it offers a wide operating temperature range from -55°C to 175°C. This component is frequently utilized in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5300 pF @ 15 V |