IPB031NE7N3GATMA1
MOSFET N-CH 75V 100A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies OptiMOS™ IPB031NE7N3GATMA1 is an N-Channel Power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 75V and a continuous drain current (Id) capability of 100A at 25°C (Tc). With a maximum on-resistance (Rds On) of 3.1mOhm at 100A and 10V, it offers efficient power switching. The device is housed in a PG-TO263-3-2 package, suitable for surface mounting. Key parameters include a gate charge (Qg) of 117 nC at 10V and an input capacitance (Ciss) of 8130 pF at 37.5V. This MOSFET excels in demanding power management solutions across various industries, including automotive and industrial power systems, where its robust thermal performance, rated at 214W (Tc), and low Rds(on) are critical. It operates within a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 155µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8130 pF @ 37.5 V |
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