IPB023N06N3GATMA1
MOSFET N-CH 60V 140A TO263-7Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB023N06N3GATMA1 is an N-channel power MOSFET designed for demanding applications. This component features a 60V drain-source voltage rating and a continuous drain current capability of 140A at 25°C (Tc). The device exhibits a low on-resistance of 2.3mOhm at 100A and 10V Vgs, facilitated by its advanced OptiMOS™ technology. Key parameters include a gate charge of 198nC (max) at 10V Vgs and an input capacitance of 16000pF (max) at 30V Vds.
The IPB023N06N3GATMA1 is housed in a PG-TO263-7 package, suitable for surface mounting. It supports a maximum power dissipation of 214W (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ). This MOSFET is utilized in power management solutions, automotive systems, and industrial power supplies where high efficiency and robust performance are critical.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 140A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 141µA |
| Supplier Device Package | PG-TO263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 198 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 16000 pF @ 30 V |
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