IPB023N04NGATMA1
MOSFET N-CH 40V 90A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB023N04NGATMA1 is an N-channel Power MOSFET designed for demanding applications. This device features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 90A at 25°C (Tc), with a maximum power dissipation of 167W (Tc). The extremely low on-resistance (Rds On) of 2.3 mOhm at 90A and 10V gate drive voltage ensures high efficiency. Key parameters include a gate charge (Qg) of 120 nC at 10V and input capacitance (Ciss) of 10000 pF at 20V. Packaged in a PG-TO263-3 (D2PAK) surface-mount package, this MOSFET is suitable for high-power switching applications across automotive and industrial sectors. It operates within a temperature range of -55°C to 175°C (TJ) and offers a ±20V maximum gate-source voltage.
Additional Information
Series: Optimos™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 95µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10000 pF @ 20 V |
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