IPB023N04NF2SATMA1
TRENCH <= 40VManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies StrongIRFET™2 N-Channel MOSFET, part number IPB023N04NF2SATMA1, is a 40V device designed for high-performance power applications. This TO-263-3 (D2PAK) packaged MOSFET offers a continuous drain current of 30A (Ta) or 122A (Tc) at 25°C, with a maximum power dissipation of 3.8W (Ta) or 150W (Tc). Its low on-resistance of 2.35mOhm at 70A and 10V (Vgs) makes it suitable for demanding switching applications. Key parameters include a gate charge (Qg) of 102 nC at 10V and an input capacitance (Ciss) of 4800 pF at 20V. The device operates within a temperature range of -55°C to 175°C. This component is commonly utilized in industrial automation, power supplies, and electric vehicle systems.
Additional Information
Series: StrongIRFET™2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 122A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.35mOhm @ 70A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 3.4V @ 81µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 102 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 20 V |
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