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IPB022N12NM6ATMA1

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IPB022N12NM6ATMA1

TRENCH >=100V

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 120 V 29A (Ta), 167A (Tc) 3.8W (Ta), 395W (Tc) Surface Mount PG-TO263-3-2

Additional Information

Series: OptiMOS™ 6RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Digi-Reel®Datasheet:
Technical Details:
PackagingDigi-Reel®
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C29A (Ta), 167A (Tc)
Rds On (Max) @ Id, Vgs2.2mOhm @ 100A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id3.6V @ 275µA
Supplier Device PackagePG-TO263-3-2
Grade-
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)120 V
Gate Charge (Qg) (Max) @ Vgs141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds11000 pF @ 60 V
Qualification-

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