IPB022N04LGATMA1
MOSFET N-CH 40V 90A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB022N04LGATMA1 is a 40V N-Channel power MOSFET designed for high-efficiency switching applications. This device features a low on-resistance of 2.2mOhm at 90A and 10V, minimizing conduction losses. With a continuous drain current of 90A (Tc) and a maximum power dissipation of 167W (Tc), it is suitable for demanding power management tasks. The TO-263-3, D2PAK package facilitates surface mounting and effective thermal management. Key electrical parameters include a gate charge of 166 nC at 10V and input capacitance of 13,000 pF at 20V. Operating temperature ranges from -55°C to 175°C (TJ). This component is widely utilized in automotive, industrial power supplies, and electric vehicle charging systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 95µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 166 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13000 pF @ 20 V |
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