IPB021N06N3GATMA1
MOSFET N-CH 60V 120A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel MOSFET, part number IPB021N06N3GATMA1, is a high-performance power semiconductor designed for demanding applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current capability of 120A at 25°C (Tc), with a maximum power dissipation of 250W (Tc). The low on-resistance of 2.1mOhm is achieved at 100A and 10V gate-source voltage, minimizing conduction losses. Key parameters include a gate charge (Qg) of 275 nC (max) and input capacitance (Ciss) of 23000 pF (max) at 30V, facilitating efficient switching. The device is housed in a PG-TO263-3 package, commonly known as D2PAK, for surface mounting. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for high-power switching and power management solutions across various industrial sectors.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 196µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 275 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 23000 pF @ 30 V |
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