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IPB020NE7N3GATMA1

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IPB020NE7N3GATMA1

MOSFET N-CH 75V 120A D2PAK

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 75 V 120A (Tc) 300W (Tc) Surface Mount PG-TO263-3

Additional Information

Series: OptiMOS™ 3RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs2mOhm @ 100A, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id3.8V @ 273µA
Supplier Device PackagePG-TO263-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds14400 pF @ 37.5 V

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