IPB020N04NGATMA1
MOSFET N-CH 40V 140A TO263-7Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB020N04NGATMA1 is a high-performance N-Channel Power MOSFET in a PG-TO263-7-3 package. This device features a 40V drain-source voltage and a continuous drain current of 140A at 25°C (Tc), with a maximum power dissipation of 167W (Tc). The low on-resistance of 2mOhm at 100A and 10V, coupled with a gate charge of 120 nC at 10V, ensures efficient switching. Input capacitance (Ciss) is specified at 9700 pF maximum at 20V. This component is suitable for surface mount applications and operates within a temperature range of -55°C to 175°C (TJ). Its robust specifications make it ideal for demanding applications in automotive, industrial power supplies, and motor control systems. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 140A (Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 95µA |
| Supplier Device Package | PG-TO263-7-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9700 pF @ 20 V |
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