IPB019N08N5ATMA1
MOSFET N-CH 80V 180A TO263-7Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ 5 series N-Channel Power MOSFET, part number IPB019N08N5ATMA1, offers an 80 V drain-source voltage rating and a continuous drain current of 180 A at 25°C. This surface mount device, housed in a TO-263-7 package, features a low on-resistance of 1.95 mOhm maximum at 100 A and 10 V gate-source voltage. With a maximum power dissipation of 224 W (Tc) and a junction temperature range of -55°C to 175°C, it is suitable for demanding applications. Key parameters include input capacitance (Ciss) of 8970 pF (max) and gate charge (Qg) of 123 nC (max). This component is commonly utilized in power conversion, industrial motor control, and automotive electronics. The device is supplied in a Tape & Reel (TR) package.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.95mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 224W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 154µA |
| Supplier Device Package | PG-TO263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 123 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8970 pF @ 40 V |
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