IPB019N06L3GATMA1
MOSFET N-CH 60V 120A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ series N-Channel Power MOSFET, part number IPB019N06L3GATMA1. This surface mount device offers a 60V drain-source voltage and a continuous drain current of 120A at 25°C (Tc). Featuring a low on-resistance of 1.9mOhm at 100A and 10V, this MOSFET is designed for high-efficiency power switching applications. The gate charge is specified at 166nC maximum at 4.5V, with input capacitance Ciss at 28000pF maximum at 30V. Power dissipation is rated at 250W (Tc). The device is housed in a PG-TO263-3 package, also known as TO-263-3, D2PAK. Operating temperature ranges from -55°C to 175°C (TJ). This component is suitable for use in automotive and industrial power supply applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 196µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 166 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 28000 pF @ 30 V |
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