IPB018N10N5ATMA1
TRENCH >=100VManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ 5 N-Channel Power MOSFET, part number IPB018N10N5ATMA1, offers a 100V drain-source voltage and a continuous drain current capability of 33A at 25°C ambient and 176A at 25°C case. This device features a low on-resistance of 1.83mOhm at 100A and 10V Vgs. The IPB018N10N5ATMA1 is designed for high-efficiency power conversion applications, utilizing TRENCH technology for enhanced performance. Key parameters include a maximum gate charge of 210 nC at 10V and an input capacitance of 16000 pF at 50V. Packaged in a PG-TO263-3 (TO-263AB) surface mount package, it operates across a temperature range of -55°C to 175°C. This component is suitable for demanding applications in the automotive and industrial sectors.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Ta), 176A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.83mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 375W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 270µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 16000 pF @ 50 V |
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