IPB015N04LGATMA1
MOSFET N-CH 40V 120A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB015N04LGATMA1 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 120A at 25°C (Tc), with a maximum power dissipation of 250W (Tc). The low on-resistance (Rds On) of 1.5mOhm at 100A and 10V gate-source voltage (Vgs) minimizes conduction losses. Key parameters include a gate charge (Qg) of 346 nC at 10V and input capacitance (Ciss) of 28000 pF at 25V. The MOSFET is housed in a PG-TO263-3 package, commonly known as TO-263 D2PAK, suitable for surface mounting. It operates across a temperature range of -55°C to 175°C (TJ) and supports gate drive voltages from 4.5V to 10V. This component finds application in automotive, industrial power supplies, and electric vehicle systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 200µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 346 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 28000 pF @ 25 V |
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