IPB011N04NF2SATMA1
TRENCH <= 40VManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IPB011N04NF2SATMA1, an N-Channel MOSFET from the StrongIRFET™2 series. This device features a drain-source voltage (Vdss) of 40V and boasts a continuous drain current (Id) of 43A at 25°C ambient and 201A at 25°C case temperature. The on-resistance (Rds On) is a maximum of 1.15mOhm at 100A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 315 nC (max) at 10V and input capacitance (Ciss) of 15000 pF (max) at 20V. This surface mount component, packaged in a TO-263-3 (D2PAK) configuration, operates across a temperature range of -55°C to 175°C. With a maximum power dissipation of 3.8W (ambient) and 375W (case), the IPB011N04NF2SATMA1 is suitable for applications in automotive, industrial power control, and high-current switching circuits.
Additional Information
Series: StrongIRFET™2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43A (Ta), 201A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.15mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 375W (Tc) |
| Vgs(th) (Max) @ Id | 3.4V @ 249µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 315 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15000 pF @ 20 V |
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