IPB009N03LGATMA1
MOSFET N-CH 30V 180A TO263-7Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPB009N03LGATMA1 is an N-Channel MOSFET from the OptiMOS™ series, supplied in a PG-TO263-7-3 package for surface mounting. This component features a 30V drain-source voltage (Vdss) and supports a continuous drain current of 180A (Tc) at 25°C. The device offers a low on-resistance of 0.95mOhm maximum at 100A and 10V gate-source voltage. Key electrical characteristics include a gate charge (Qg) of 227 nC maximum at 10V and input capacitance (Ciss) of 25000 pF maximum at 15V. With a maximum power dissipation of 250W (Tc), it is suitable for demanding applications. The operating temperature range is -55°C to 175°C (TJ). This MOSFET technology is utilized in industries such as automotive and industrial power management. It is provided in Tape & Reel packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.95mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO263-7-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 227 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 25000 pF @ 15 V |
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