IPAW70R600CEXKSA1
MOSFET N-CH 700V 10.5A TO220-31Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPAW70R600CEXKSA1 is a 700 V, N-channel CoolMOS™ CE series power MOSFET. This device offers a continuous drain current of 10.5 A at 25°C with a maximum power dissipation of 86 W (Tc). It features a low on-resistance of 600 mOhm at 1 A, 10 V. The IPAW70R600CEXKSA1 has a gate charge (Qg) of 22 nC at 10 V and an input capacitance (Ciss) of 474 pF at 100 V. Designed for through-hole mounting, it is housed in a PG-TO220-3-FP package. This component is suitable for applications in power factor correction, switch mode power supplies, and industrial power systems. The operating temperature range is -40°C to 150°C (TJ).
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 86W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 210µA |
| Supplier Device Package | PG-TO220-3-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 474 pF @ 100 V |
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