IPAW60R360P7SE8228XKSA1
MOSFET N-CH 600V 9A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ P7 series N-channel power MOSFET, part number IPAW60R360P7SE8228XKSA1. This through-hole component features a drain-source voltage of 600V and a continuous drain current of 9A at 25°C. It offers a low on-resistance of 360mOhm maximum at 2.7A and 10V gate-source voltage. The IPAW60R360P7SE8228XKSA1 has a maximum power dissipation of 22W at case temperature and a gate charge of 13 nC maximum at 10V. Input capacitance (Ciss) is 555 pF maximum at 400V. This device is suitable for applications in power supply units, server power, industrial power, and solar inverters. The package is PG-TO220-FP.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 2.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 22W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 140µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 555 pF @ 400 V |
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