IPAW60R280P7SXKSA1
MOSFET N-CH 600V 12A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ P7 series N-Channel Power MOSFET, IPAW60R280P7SXKSA1. This 600V device features a continuous drain current rating of 12A (Tc) and a maximum power dissipation of 24W (Tc). The Rds(on) is specified at 280mOhm at 3.8A, 10V. Key parameters include a gate charge (Qg) of 18 nC @ 10 V and input capacitance (Ciss) of 761 pF @ 400 V. The device utilizes a through-hole mounting type within a PG-TO220-FP package. This component is typically employed in high-voltage power conversion applications across industries such as industrial power supplies, server power, and solar inverters.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 24W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 190µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 761 pF @ 400 V |
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