IPAW60R280CEXKSA1
MOSFET N-CH 600V 19.3A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPAW60R280CEXKSA1 is a CoolMOS™ N-Channel Power MOSFET. This component features a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 19.3 A at 25°C (Tc). The Rds On is specified at a maximum of 280 mOhm at 6.5 A and 10 V gate drive. It offers 32 W of power dissipation at 25°C (Tc) and has a typical gate charge (Qg) of 43 nC at 10 V. The device is housed in a PG-TO220 Full Pack, Wide Creepage package with through-hole mounting. Operating temperature ranges from -40°C to 150°C (TJ). This component is suitable for applications in power supply units, industrial power systems, and electric vehicle charging infrastructure.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack, Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 32W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 430µA |
| Supplier Device Package | PG-TO220 Full Pack, Wide Creepage |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 100 V |
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