IPAW60R190CEXKSA1
MOSFET N-CH 600V 26.7A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPAW60R190CEXKSA1 is a 600V N-Channel CoolMOS™ Power MOSFET designed for high-efficiency power conversion applications. This component offers a continuous drain current of 26.7A (Tc) at 25°C and a low on-resistance of 190mOhm maximum at 9.5A and 10V gate drive. Key parameters include a gate charge (Qg) of 63 nC (max) at 10V and an input capacitance (Ciss) of 1400 pF (max) at 100V. The device features a maximum power dissipation of 34W (Tc) and operates within a temperature range of -40°C to 150°C (TJ). Packaged in a PG-TO220-FP through-hole configuration, this MOSFET is suitable for use in power supplies, server applications, and industrial motor drives.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 34W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 630µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 100 V |
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