IPAN80R450P7XKSA1
MOSFET N-CH 800V 11A TO220-3-31Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ P7 series N-Channel Power MOSFET, IPAN80R450P7XKSA1, is designed for high-performance applications. This through-hole component features a drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 11A at 25°C. The device exhibits a maximum on-resistance (Rds On) of 450mOhm at 4.5A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 24 nC at 10V and an input capacitance (Ciss) of 770 pF at 500V. The PG-TO220-3-FP package allows for a maximum power dissipation of 29W at its operating temperature range of -55°C to 150°C. This MOSFET is suitable for power supplies, solar inverters, and industrial applications demanding high efficiency and reliability.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 29W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 220µA |
| Supplier Device Package | PG-TO220-3-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 500 V |
Request a Quote
Clients Also Buy
IPD70R360P7SAUMA1
MOSFET N-CH 700V 12.5A TO252-3
IPD60R180P7SAUMA1
MOSFET N-CH 600V 18A TO252-3
IPD60R280P7SAUMA1
MOSFET N-CH 600V 12A TO252-3
