IPAN80R280P7XKSA1
MOSFET N-CH 800V 17A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ P7 N-Channel MOSFET, part number IPAN80R280P7XKSA1, offers an 800V drain-source voltage with a continuous drain current of 17A at 25°C (Tc). This device features a low on-resistance of 280mOhm maximum at 7.2A and 10V gate-source voltage. The IPAN80R280P7XKSA1 is housed in a PG-TO220-3-FP package designed for through-hole mounting. Key characteristics include a gate charge of 36 nC at 10V and an input capacitance of 1200 pF at 500V. Maximum power dissipation is rated at 30W (Tc). This component is suitable for applications in power supplies, solar inverters, and industrial motor drives, leveraging Infineon's advanced MOSFET technology. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: Last Time BuyPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 7.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 360µA |
| Supplier Device Package | PG-TO220-3-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 500 V |
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