IPAN70R750P7SXKSA1
MOSFET N-CH 700V 6.5A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies CoolMOS™ P7 series N-channel power MOSFET, part number IPAN70R750P7SXKSA1, is a 700V device designed for high-performance applications. This through-hole component features a continuous drain current capability of 6.5A at 25°C and a maximum power dissipation of 20.8W. With a low on-resistance of 750mOhm at 1.4A and 10V, and a gate charge of 8.3 nC, it is optimized for efficient switching. Key parameters include a Vds of 700V, Vgs(th) of 3.5V, and an operating temperature range of -40°C to 150°C. The PG-TO220-FP package ensures robust thermal management. This MOSFET is suitable for use in power factor correction, switch mode power supplies, and solar inverters.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 1.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20.8W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 70µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 306 pF @ 400 V |
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