IPAN70R450P7SXKSA1
MOSFET N-CH 700V 10A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ P7 series N-Channel MOSFET, part number IPAN70R450P7SXKSA1, offers a 700V breakdown voltage and a continuous drain current of 10A at 25°C. This through-hole component features a maximum Rds(on) of 450mOhm at 2.3A and 10V Vgs, with a gate charge of 13.1 nC. The maximum power dissipation is rated at 22.7W (Tc). Designed for efficient switching, this MOSFET is suitable for demanding applications in power supply units, solar inverters, and industrial motor drives. The PG-TO220-FP package provides robust thermal performance.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 2.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 22.7W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 120µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 424 pF @ 400 V |
Request a Quote
Clients Also Buy
IPD70R360P7SAUMA1
MOSFET N-CH 700V 12.5A TO252-3
IPD60R180P7SAUMA1
MOSFET N-CH 600V 18A TO252-3
IPD60R280P7SAUMA1
MOSFET N-CH 600V 12A TO252-3
