IPAN60R800CEXKSA1
MOSFET N-CH 600V 8.4A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ N-Channel MOSFET, part number IPAN60R800CEXKSA1, offers a 600V drain-source breakdown voltage. This device features a maximum continuous drain current of 8.4A at 25°C (Tc) and a maximum on-resistance of 800mOhm at 2A and 10V. The IPAN60R800CEXKSA1 is packaged in a PG-TO220-FP through-hole configuration, with a power dissipation capability of 27W (Tc). Key specifications include a gate charge of 17.2 nC at 10V and an input capacitance of 373 pF at 100V. This component is suitable for applications requiring high voltage switching, commonly found in power supply units and industrial motor control.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 27W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 170µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 373 pF @ 100 V |
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