IPAN60R650CEXKSA1
MOSFET N-CH 600V 9.9A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel MOSFET, part number IPAN60R650CEXKSA1, offers a 600V drain-source breakdown voltage. This device features a continuous drain current capability of 9.9A at 25°C (Tc) and a maximum power dissipation of 28W (Tc). The Rds(On) is specified at 650mOhm maximum at 2.4A and 10V gate-source voltage. Key parameters include a gate charge of 20.5nC maximum at 10V and input capacitance of 440pF maximum at 100V. Designed for through-hole mounting in a PG-TO220-FP package, this MOSFET operates across a temperature range of -40°C to 150°C (TJ). Applications include power factor correction, switch mode power supplies, and general-purpose power switching in consumer electronics and industrial automation.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Last Time BuyPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 200µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 20.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 100 V |
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