IPAN60R360PFD7SXKSA1
MOSFET N-CH 650V 10A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ PFD7 series N-Channel MOSFET, part number IPAN60R360PFD7SXKSA1, offers a 650V drain-source breakdown voltage and a continuous drain current of 10A at 25°C (Tc). This device features a low on-resistance of 360mOhm maximum at 2.9A and 10V, with a typical gate charge of 12.7nC at 10V. The input capacitance (Ciss) is specified at 534pF maximum at 400V. Designed with a TO-220-3 Full Pack package for through-hole mounting, this component has a maximum power dissipation of 23W (Tc). The IPAN60R360PFD7SXKSA1 is suitable for applications in power supply units, solar inverters, and industrial power systems. Operating temperature range is -40°C to 150°C (TJ).
Additional Information
Series: CoolMOS™PFD7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 2.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 23W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 140µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 534 pF @ 400 V |
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