IPAN60R360P7SXKSA1
MOSFET N-CH 650V 9A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ P7 series N-channel power MOSFET, part number IPAN60R360P7SXKSA1, offers a 650 V breakdown voltage and a continuous drain current of 9 A at 25°C (Tc). This through-hole component features a maximum on-resistance of 360 mOhm at 2.7 A and 10 V, with a gate charge of 13 nC at 10 V. The device supports a maximum power dissipation of 22 W (Tc) and operates across a temperature range of -40°C to 150°C (TJ). Its TO-220-3 Full Pack package, identified as PG-TO220 Full Pack, makes it suitable for applications in power supplies, server and telecom systems, and industrial power conversion.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 2.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 22W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 140µA |
| Supplier Device Package | PG-TO220 Full Pack |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 555 pF @ 400 V |
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