IPAN60R280P7SXKSA1
MOSFET N-CH 650V 12A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ P7 series N-Channel Power MOSFET, part number IPAN60R280P7SXKSA1, offers a 650V drain-source breakdown voltage and 12A continuous drain current at 25°C. This device features a low on-resistance of 280mOhm maximum at 3.8A and 10V gate-source voltage, with a gate charge of 18nC maximum at 10V. The input capacitance (Ciss) is 761pF maximum at 400V. Designed for through-hole mounting in a PG-TO220 Full Pack package, it supports a maximum power dissipation of 24W. This component is suitable for applications in power supplies, industrial power management, and server applications.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 24W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 190µA |
| Supplier Device Package | PG-TO220 Full Pack |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 761 pF @ 400 V |
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