IPAN50R500CEXKSA1
MOSFET N-CH 500V 11.1A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPAN50R500CEXKSA1, offers 500V drain-source breakdown voltage and a continuous drain current of 11.1A at 25°C (Tcase). This through-hole component features a maximum Rds(on) of 500mOhm at 2.3A and 13V, with a gate charge (Qg) of 18.7 nC at 10V. The input capacitance (Ciss) is rated at a maximum of 433 pF at 100V. Packaged in a PG-TO220-FP, this device is suitable for applications requiring efficient switching and high voltage handling, including power supplies, lighting, and industrial motor control. It operates within a temperature range of -40°C to 150°C (TJ) and has a maximum power dissipation of 28W (Tcase).
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 2.3A, 13V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 200µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 433 pF @ 100 V |
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