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IPA95R130PFD7XKSA1

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IPA95R130PFD7XKSA1

MOSFET N-CH 950V 13.9A TO220-3

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 950 V 13.9A (Tc) 33W (Tc) Through Hole PG-TO220 Full Pack

Additional Information

Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C13.9A (Tc)
Rds On (Max) @ Id, Vgs130mOhm @ 25.1A, 10V
FET Feature-
Power Dissipation (Max)33W (Tc)
Vgs(th) (Max) @ Id3.5V @ 1.25mA
Supplier Device PackagePG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)950 V
Gate Charge (Qg) (Max) @ Vgs141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4170 pF @ 400 V

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