IPA90R800C3XKSA1
MOSFET N-CH 900V 6.9A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPA90R800C3XKSA1, a CoolMOS™ N-channel MOSFET, offers a 900V breakdown voltage and 6.9A continuous drain current at 25°C (Tc). This component features a high power dissipation capability of 33W (Tc) and a maximum on-resistance of 800mOhm at 4.1A and 10V gate drive. The IPA90R800C3XKSA1 is housed in a PG-TO220-FP package, suitable for through-hole mounting. Key parameters include a gate charge of 42nC at 10V and input capacitance of 1100pF at 100V. This device is designed for applications requiring high voltage switching, commonly found in power supplies, industrial automation, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 4.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 33W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 460µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 100 V |
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