IPA90R500C3XKSA1
MOSFET N-CH 900V 11A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies IPA90R500C3XKSA1 is a 900V N-Channel CoolMOS™ Power MOSFET in a PG-TO220-FP package. This device offers a continuous drain current of 11A at 25°C and a maximum power dissipation of 34W at 25°C case temperature. With a low on-resistance of 500mOhm at 6.6A and 10V Vgs, it features a gate charge of 68 nC and input capacitance of 1700 pF at 100V. Designed for through-hole mounting, it operates across a temperature range of -55°C to 150°C. Applications include power factor correction, switch-mode power supplies, and lighting.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 34W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 740µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 100 V |
Request a Quote
Clients Also Buy
SPB11N60C3ATMA1
MOSFET N-CH 650V 11A TO263-3
IPB95R310PFD7ATMA1
LOW POWER_NEW
SPP17N80C3XKSA1
MOSFET N-CH 800V 17A TO220-3
