IPA90R1K2C3XKSA1
MOSFET N-CH 900V 5.1A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPA90R1K2C3XKSA1 is a CoolMOS™ N-Channel Power MOSFET. This component features a drain-to-source voltage (Vdss) of 900V and a continuous drain current (Id) of 5.1A at 25°C (Tc). The Rds On is a maximum of 1.2 Ohms at 2.8A and 10V gate-source voltage. Input capacitance (Ciss) is 710 pF maximum at 100V, with a gate charge (Qg) of 28 nC maximum at 10V. The device offers a power dissipation of 31W at 25°C (Tc) and is mounted via a through-hole configuration in a PG-TO220-FP package. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is suitable for applications in power factor correction, server power supplies, and industrial power systems.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 31W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 310µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 100 V |