IPA90R1K0C3XKSA1
MOSFET N-CH 900V 5.7A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' IPA90R1K0C3XKSA1 is a CoolMOS™ N-channel power MOSFET designed for high-voltage applications. This component features a 900V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 5.7A at 25°C (Tc), with a maximum power dissipation of 32W (Tc). The IPA90R1K0C3XKSA1 offers a low on-resistance (Rds On) of 1 Ohm at 3.3A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 34 nC at 10V and input capacitance (Ciss) of 850 pF at 100V. With a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 3.5V at 370µA, this MOSFET is suitable for use in power supply units, industrial power systems, and renewable energy applications. The device is housed in a PG-TO220-FP package and supports through-hole mounting.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 3.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 32W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 370µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 100 V |