IPA80R650CEXKSA1
MOSFET N-CH 800V 4.5A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IPA80R650CEXKSA1 is an N-channel Power MOSFET from the CoolMOS™ CE series. This component features a drain-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 4.5 A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 650 mOhm at 5.1 A and 10 V gate-source voltage. With a maximum power dissipation of 33 W (Tc), it utilizes through-hole mounting in a PG-TO220-FP package. Key parameters include a gate charge (Qg) of 45 nC at 10 V and input capacitance (Ciss) of 1100 pF at 100 V. This MOSFET is suitable for applications in power supply units and industrial power systems.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 5.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 33W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 470µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 100 V |
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