IPA80R460CEXKSA1
MOSFET N-CH 800V 5A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPA80R460CEXKSA1, a CoolMOS™ CE series N-Channel Power MOSFET, offers an 800V drain-source voltage (Vdss) and a continuous drain current (Id) of 5A at 25°C (Tc). This through-hole component features a low on-resistance (Rds On) of 460mOhm at 7.1A and 10V Vgs, with a gate charge (Qg) of 64 nC at 10V. The input capacitance (Ciss) is a maximum of 1600 pF at 100V. Designed for demanding applications, this device exhibits a maximum power dissipation of 34W (Tc) and operates within a temperature range of -40°C to 150°C (TJ). The IPA80R460CEXKSA1 is packaged in a TO-220-3 Full Pack (PG-TO220-FP) and is suitable for use in power supply units, lighting, and industrial applications.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 460mOhm @ 7.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 34W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 680µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 100 V |
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