IPA80R310CEXKSA1
MOSFET N-CH 800V 6.8A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPA80R310CEXKSA1 is an N-Channel Power MOSFET from the CoolMOS™ CE series. This component features a drain-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 6.8 A at 25°C (Tc). The on-resistance (Rds On) is a maximum of 310 mOhm at 11 A and 10 V. With a maximum power dissipation of 35 W (Tc), this device is housed in a PG-TO220-FP package for through-hole mounting. Key parameters include a gate charge (Qg) of 91 nC at 10 V and an input capacitance (Ciss) of 2320 pF at 100 V. The IPA80R310CEXKSA1 is suitable for applications in power supplies, lighting, and industrial power systems. It operates within a temperature range of -40°C to 150°C (TJ) and is supplied in a tube.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 310mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 1mA |
| Supplier Device Package | PG-TO220-FP |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2320 pF @ 100 V |
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