IPA80R1K4CEXKSA1
MOSFET N-CH 800V 2.8A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPA80R1K4CEXKSA1 is an N-Channel CoolMOS™ CE series MOSFET. This through-hole component features a drain-to-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 2.8 A at 25°C (Tc). The IPA80R1K4CEXKSA1 offers a maximum on-resistance (Rds On) of 1.4 Ohm at 2.3 A and 10 V gate-source voltage. With a maximum power dissipation of 31 W (Tc), this device is suitable for applications in power supplies and industrial motor control. The PG-TO220-FP package facilitates ease of mounting. Key parameters include a gate charge of 23 nC at 10 V and an input capacitance of 570 pF at 100 V. The operating temperature range is -40°C to 150°C.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 31W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 240µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 100 V |
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