IPA80R1K2P7XKSA1
MOSFET N-CH 800V 4.5A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPA80R1K2P7XKSA1 is an N-Channel Power MOSFET from the CoolMOS™ P7 series. This component features a drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 4.5A at 25°C (Tc). With a maximum on-resistance (Rds On) of 1.2 Ohm at 1.7A and 10V, and a power dissipation of 25W (Tc), it is suitable for high-voltage applications. The device utilizes MOSFET technology and is housed in a PG-TO220-3-FP package for through-hole mounting. Key parameters include a gate charge (Qg) of 11 nC @ 10V and an input capacitance (Ciss) of 300 pF @ 500V. This component finds application in power supply units and industrial power conversion systems. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 1.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 80µA |
| Supplier Device Package | PG-TO220-3-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 500 V |
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